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ASU MBE Optoelectronics Group

Publications

Conference presentations

2021
  • 344 Tyler McCarthy, Zheng Ju, Shui-Qing (Fisher) Yu, Yong Zhang, Momentum (k)-Space Charge Separation Mid-Wave Infrared Photodetectors Using SiGeSn Alloys, oral presentation at the IEEE Photonics Society 2021 Summer Topicals Meeting Series, Virtual Conference (07/2021).
2019
  • 343 Jia Ding, Jacob Becker, Cheng-Ying Tsai, Calli Campbell, Yong-Hang Zhang, Comparison study of 1.7-eV MgCdTe solar cells and applications for tandem cells, oral presentation at the 29th International Photovoltaic Science and Engineering Conference (PVSEC 2019), Xi’an, China. (Best Paper Award)
  • 342 Tyler McCarthy, Y.-H.Zhang, structural and Optical Properties of PbTe/CdTe/InSb Heterostructures Grown using Molecular Beam Epitaxy, oral presentation at the 35th North American Conference on Molecular Beam Epitaxy (NAMBE 2019),  Ketchum, Idaho(09/2019)
  • 341 Cheng-Ying Tsai, Y. Zhang, Z. Ju, Y.-H. Zhang, Vertical Hole Transport in InAs/InAs1-xSbx Type-II Superlattices, oral presentation at the 35th North American Conference on Molecular Beam Epitaxy (NAMBE 2019),  Ketchum, Idaho(09/2019)
  • 340 Jia Ding, Yong-Hang Zhang, Study of Open-Circuit Voltage in CdTe/MgCdTe Double-Heterostructure Solar Cells with Different Hole Contacts, oral presentation at The IEEE Photovoltaic Specialist Conference (PVSC 46th), Chicago, IL(04/2019)
2018
  • 339.  M. B. Lassise, T. T. McCarthy, B. D. Tracy, D. J. Smith, and Y.-H. Zhang, MBE Growth of Monocrystalline PbTe/CdTe/InSb Heterovalent Heterostructures, oral presentation at the 14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018) Flagstaff, October 7-10, 2018.
  • 338.  C.-Y. Tsai, J. Ding, and Y.-H. Zhang, Epitaxial Lift-Off Technology Based on Water-Soluble MgTe for Multi-Color Photodetector and Solar Cell Applications,oral presentation at the 14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018) Flagstaff, October 7-10, 2018.
  • 337.  M. B. Lassise, B. D. Tracy, D. J. Smith, and Y.-H. Zhang, High-Reflectivity Heterovalent Distributed Bragg Reflectors for Midwave Infrared Resonant Cavities, oral presentation at the 34th North American Conference on Molecular Beam Epitaxy (NAMBE 2018), Banff, September 30 – October 5, 2018.
  • 336.  C.-Y. Tsai, C. M. Campbell, J. Ding, and Y.-H. Zhang, Epitaxial Lift-Off of II-VI Thin Film Using Water Soluble MgTe Sacrificial Layer, oral presentation at the International Conference on Molecular Beam Epitaxy, Shanghai, September 2-7, 2018.
  • 335.  M. B. Lassise, T. T. McCarthy, B. D. Tracy, D. J. Smith, and Y.-H. Zhang, Heterovalent CdTe/InSb Quantum Structures, oral presentation at the International Conference on Molecular Beam Epitaxy, Shanghai, September 2-7, 2018.
  • 334.  J. Ding and Y.-H. Zhang, Vertical transport across CdTe/InSb heterovalent interface grown by MBE, oral presentation at the International Conference on Molecular Beam Epitaxy, Shanghai, September 2-7, 2018.
  • 333.  C. M. Campbell, X. Wang, R. Nemanich and Y.-H. Zhang, “Structural property and band offsets in the CdTe/InSb(001) heterovalent interface grown by using molecular beam epitaxy,oral presentation at the International Conference on Molecular Beam Epitaxy, Shanghai, September 2-7, 2018. (Outstanding Student MBE Award)
  • 332.  B. Seredyński, M. Król, P. Starzyk, R. Mirek, M. Ściesiek, K. Sobczak, J. Borysiuk, D. Stephan, J. Szczytko, B. Piętka, W. Pacuski, C. M. Campbell, C.-Y. Tsai, J. Ding, Y.-H. Zhang, Epitaxial layers lift-off using MgTe sacrificial buffer, 7th International School & Conference on the Physics of Semiconductors “Jaszowiec 2018”, Szczyrk, Poland, June 16th – 22nd, 2018
  • 331.  M. Lassise, C.-Y. Tsai, and Y.-H. Zhang, III-V/II-VI semiconductor distributed Bragg reflectors and resonant cavities for narrow-spectral MWIR LED and photodetector applications, Quantum Structure Infrared Photodetectors Conference, (QSIP), Stockholm, June 16-21 2018.
  • 330.  C. M. Campbell, C.-Y. Tsai, J. Ding, B. Seredynski, W. Pacuski, and Y.-H. Zhang, “Lift-off technology using water soluble MgTe layer for high-efficiency CdTe and MgxCd1-xTe solar cells,” presented at the 7thWorld Conference on Photovoltaic Energy Conversion in Waikoloa, Hawaii in June 10-15, 2018.
  • 329.  E. Luna,  A. Trampert, J. Lu, T. Aoki, Y.-H. Zhang, M.R. McCartney and D.J. Smith, Analysis of composition profiles across the CdTe/InSb interface, Compound Semiconductor Week, Cambridge, MA, July 8, 2018.
2017
  • M. Liao, C. Campbell, C.-Y. Tsai, Y.-H. Zhang, and M. Goorsky, Strain analysis of CdTe on InSb epitaxial structures using x-ray based reciprocal space measurements and dynamical diffraction simulations, October 31 – November 2, 2017
  • M. Lassise, P. Wang, B. Tracy, G. Chen, D. J. Smith, and Y.-H. Zhang, II-VI/III-V Heterovalent Quantum Structures grown in a Single-Chamber MBE System, the 33rdNorth American Conference on Molecular Beam Epitaxy (NAMBE 2017), Galveston Island, October 15-18, 2017
  • C.-Y. Tsai, G. Chen, Y.-H. Zhang, MBE grown CdSe/CdTe superlattices on InSb (001) substrates for solar cell applications, the 33rdNorth American Conference on Molecular Beam Epitaxy (NAMBE 2017), Galveston Island, October 15-18, 2017
  • C. M. Campbell, J. J. Becker, P. Wang, C.-Y. Tsai, G. Chen, W. Weigand, J. Shi, N. Theut, M. I. Bertoni, Z. Holman, Y.-H. Zhang, MgxCd1-xTe solar cells with a 1.7 eV n-type absorber region grown by MBE, the 33rdNorth American Conference on Molecular Beam Epitaxy (NAMBE 2017), Galveston Island, October 15-18, 2017
  • C. M. Campbell, X.-H. Zhao, Y. Zhao, M. Boccard, C.-Y. Tsai, J. J. Becker, Z. Holman, and Y.-H. Zhang, Monocrystalline 1.7 eV MgCdTe double-heterostructure subcell for high-efficiency II-VI/Si tandem device applications, the 44rdIEEE Photovoltaic Specialist Conference, Washington D.C., June 25-30, 2017
  • J. J. Becker, X. Xu, R. Woods-Robinson, C. M. Campbell, M. Lassise, J. Ager, and Y.-H. Zhang, CuZnS hole contacts on monocrystalline CdTe/MgCdTe double-heterostructure solar cells, the 44rdIEEE Photovoltaic Specialist Conference, Washington D.C., June 25-30, 2017
  • M. Lassise, G. Chen, B. Tracy, P. Wang, D. Smith, and Y.-H. Zhang, Heterovalent ZnSe/GaAs/ZnSe double heterostructures and quantum wells grown using MBE, Compound Semiconductor Week, Berlin, May 14–18, 2017
  • C. M. Campbell, C.-Y. Tsai, J. Becker, M. Boccard, Z. Holman, and Y.-H. Zhang, 1.7 eV Mg0.13Cd0.87Te solar cells for tandem applications, MRS Spring Meeting, Phoenix, April 17-21, 2017
  • Y.-H. Zhang, Heterovalent structures and potential device applications, Workshop on Compound Semiconductor Devices and Materials (WOCSEMMAD), Tampa, Feb. 19-22, 2017
2016
  • M. Boccard, J. Becker, Y. Zhao, C. M. Campbell, X.-H. Zhao, S. Liu, M. Lassise, E. Suarez, Z. Yu, Z. Holman, and Y.-H. Zhang, Monocrystalline CdTe solar cell with an a-Si:H hole contact reaches 1.1 V open-circuit voltage, the 26thedition of the International Photovoltaic Science and Engineering Conference (PVSEC-26), 24 – 28 October 2016, Singapore
  • 318.  M. Lassise, B. Tracy, D. J. Smith, and Y.-H. Zhang, Heterovalent InAsSb/ZnTe Double Heterostructures Lattice-Matched to GaSb Substrate, the 32ndNorth American Molecular Beam Epitaxy Conference (NAMBE), September 18-21, 2016, Saratoga Springs, New York
  • 317. Y.-H. Zhang, X.-H. Zhao, C. Campbell, M. Lassise,  B. Tracy, Jacob Becker, Yuan Zhao, Mathieu Boccard, David Smith, Zachary Holman, CdTe/MgCdTe double-heterostructures and solar cells grown by MBE on lattice-matched InSb substrates, the 19thInternational Conference on Molecular-Beam Epitaxy, 4-9 Sep. 2016, Montpellier, France.
  • 316.  C. M. Campbell, X.-H. Zhao,E. Suarez, J. Becker, Y. Zhao, M. Boccard, M. B. Lassise, Z. Holman, and Y.-H. Zhang, Mg0.13Cd0.87Te/MgyCd1-yTe (y>0.13) double heterostructures and photovoltaic devices for high-efficiency II-VI/Si tandem cells, the 19thInternational Conference on Molecular-Beam Epitaxy, 4-9 Sep. 2016, Montpellier, France
  • 315. J. Lu, E. Luna, T. Aoki, Y.-H. Zhang, and D. J. Smith, Influence of Bi as surfactant on the unintentional incorporation of Sb in InAs during the MBE growth of InAs/InAsSb superlattices, Microscopy & Microanalysis 2016 Meeting, Columbus, July 24-28, 2016.
  • 314.  C. Campbell, Y. Zhao, E. Saurez, X.-H. Zhao, J. Becker, Y.-H. Zhang, MBE-grown Mg0.13Cd0.87Te for MgCdTe (1.7 eV)/Si (1.1 eV) tandem solar cell applications, the 43rdInternational Symposium on Compound Semiconductor, Toyama, June 26-30, 2016.
  • 313.  Z.-Y. Lin, Z.-Y. He, Y.-H. Zhang, Influence of carrier localization on the carrier transport in InAs/InAsSb type-II superlattices, Quantum Structure Infrared Photodetectors (QSIP), Tel Aviv, June 12-17, 2016.
  • 312.  Z.-Y. He, C. Campbell, M. Lassise, Z.-Y. Lin, M. Boccard, Z. Holman, Y.-H. Zhang, Optically-addressed Visible/MWIR two-color photodetectors using monolithically-integrated CdTe and InSb diodes, Quantum Structure Infrared Photodetectors (QSIP), Tel Aviv, June 12-17, 2016.
  • 311.  C. M. Campbell, Y. Zhao, E. Suarez, M. Boccard, X.-H. Zhao, M. B. Lassise, P. T. Webster, Z.-Y. He, S. Johnson, Z. Holman, Y.-H. Zhang, 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications, the 43rdIEEE Photovoltaic Specialist Conference, Portland, June 5-10, 2016.
  • 310.  Y. Zhao, X.-H. Zhao, Y.-H. Zhang, Radiative recombination dominated n-type monocrystalline CdTe/MgCdTe double-heterostructures, the 43rdIEEE Photovoltaic Specialist Conference, Portland, June 5-10, 2016.
  • 309.  Y. Zhao, M. Boccard, Jacob Becker, Xin-Hao Zhao, Calli M. Campbell, Ernesto Suarez, Zachary Holman, Yong-Hang Zhang, Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with 1.096 V Voc and 17.0 % efficiency,  the 43rdIEEE Photovoltaic Specialist Conference, Portland, June 5-10, 2016. (Best student paper award)
  • 308. J. J. Becker, C. M. Campbell, Y. Zhao, M. Boccard, E. Suarez, M. Lassise, Y.-H. Zhang, Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a passivated ZnTe hole-contact layer, the 43rdIEEE Photovoltaic Specialist Conference, Portland, June 5-10, 2016. (Best post award)
  • 307.  X.-H. Zhao, S. Liu, C. M. Campbell, Y. Zhao, M. B. Lassise, Y.-H. Zhang, Impact of thermionic emission and tunneling effect on the measurement of low interface recombination velocity (~1 cm/s) in CdTe/MgxCd1-xTe double heterostructures, the 43rdIEEE Photovoltaic Specialist Conference, Portland, June 5-10, 2016.
  • 306.  X. Wang, C. Campbell1, Y.-H. Zhang, and R. Nemanich, Band alignment of hydrogen-plasma cleaned MBE CdTe on InSb (001), MRS Spring Meeting, Phoenix, 2016.
  • 305. C. Campbell, Y. Zhao, X. Zhao, X. Wang, M. Boccard, M. Lassise, S. Liu, E. Suarez, R. Nemanich, Z. Holman, Y.-H. Zhang, Lifetime, electrical and stability studies of CdTe/MgxCd1-xTe double heterostructures featuring barrier layers with high Mg composition for optoelectronic and solar cell applications,MRS Spring Meeting, Phoenix, 2016.
  • 304.  E. Suarez, M. Lassise, C. Campbell, X.-H. Zhao, D. Smith, Y.-H. Zhang, ZnTe/GaSb heterovalent structures for potential High-Speed Device Applications, MRS Spring Meeting, Phoenix, 2016.
  • 303.  X.-H. Zhao, S. Liu, C. M. Campbell, M. B. Lassise, Optical properties of CdTe/MgCdTe double heterostructures grown on InSb substrates, MRS Spring Meeting, Phoenix, 2016.
  • 302.  Z.-Y. He, J. Becker, C. Campbell, Y.-S. Kuo, S. Liu, M. Lassise, Z.-Y. Lin, and Y.-H. Zhang, Material and interface properties in an optically-addressed visible/MWIR two-color photodetector based on monolithically-integrated CdTe nBn and InSb PIN diodes, MRS Spring Meeting, Phoenix, 2016.
  • 301.  J. Lu, E. Luna, T. Aoki, Y.-H. Zhang, and D. J. Smith, Quantitative study of Sb segregation in InAs/InAs1-xSbxType-II superlattices for IR photodetectors, MRS Spring Meeting, Phoenix, 2016.
  • 300.  P. T. Webster1, A. J. Shalindar, Y.-H. Zhang, and S. R. Johnson, Molecular beam epitaxy growth of III-V materials at the GaSb lattice constant using bismuth both as an alloy constituent and as a surfactant, Lawrence Symposium on Epitaxy, Scottsdale, Feb. 21-24, 2016.
2015
  • 299.  Y.-H. Zhang, Heterovalent heterostructures and CdTe/MgCdTe DH on InSb with record low interface recombination velocity, Workshop on Compound Semiconductor Devices and Materials (WOCSEMMAD), Tucson, Feb. 1-4, 2016
  • 298.  X.-M. Shen, Z.-Y. He, S. Liu, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, Determination of Heterointerface Band Alignments in nBn Photodetectors Using Off-Axis Electron Holography, 2015 Annual Meeting of APS Four Corner Session, Tempe, USA, Oct. 16-17, 2015.
  • 297.  X.-H. Zhao, S. Liu, C. M. Campbell, M. B. Lassise, Y. Zhao, Y.-S. Kuo, Y.-H. Zhang, Ultra-long minority carrier lifetime and ultra-low interface recombination velocity in CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy, 2015 Annual Meeting of APS Four Corner Session, Tempe, USA, Oct. 16-17, 2015.
  • 296.  E. Suarez, S. Liu, X.-H. Zhao, Y. Zhao, J. Becker, C. Campbell, M. Lassise, Y.-S. Kuo, and Y.-H. Zhang, ZnTe:P/CdTe Superlattice Window for CdTe Solar Cell on InSb Substrates, 2015 Annual Meeting of APS Four Corner Session, Tempe, USA, Oct. 16-17, 2015.
  • 295.  P. T. Webster, A. J. Shalindar, N. A. Riordan, C. Gogineni, H. Liang, A. R. Sharma, and S. R. Johnson, Design and performance of mid and long infrared III-V semiconductor superlattice materials, 2015 Annual Meeting of APS Four Corner Session, Tempe, USA, Oct. 16-17, 2015.
  • 294.  S. Liu, X.-H. Zhao, Y. Zhao, J. Becker, C. Campbell, M. Lassise, Y.-S. Kuo, M. DiNezza, E. Suarez, and Y.-H. Zhang, Improving CdTe solar cell efficiency through novel heterostructures, Material Science Technology Conference (invited), Columbus, USA, Oct 4-8, 2015.
  • 293.  X.-H. Zhao, S. Liu, C. M. Campbell, M. B. Lassise, Y. Zhao, Y.-S. Kuo, Y.-H. Zhang, Kuo, Y.-H. Zhang, CdTe/MgCdTe double heterostructures with very long minority carrier lifetime and low interface recombination velocity, the U.S. workshop on the physics and chemistry of II-VI materials, Chicago, USA, Oct. 5-8, 2015.
  • 292.  J. Becker, Y.-S. Kuo, S. Liu, Y. Zhao, X.-H. Zhao, P.-Y. Su, I. Bhat, and Y.-H. Zhang, Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cellsthe U.S. workshop on the physics and chemistry of II-VI materials, Chicago, USA, Oct. 5-8, 2015.
  • 291.  S. Liu, X.-H. Zhao, C. Campbell, M. Lassise, Y. Zhao, and Y.-H. Zhang, Ultra long carrier lifetime and low interface recombination velocity in CdTe/MgCdTe double heterostructures, the 31th North American Molecular Beam Epitaxy Conference, Cancun, Mexico, Oct. 4-7, 2015.
  • 290.  Z.-Y. Lin, S. Liu, and Y.-H. Zhang, Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices grown by molecular beam epitaxy, the 31th North American Molecular Beam Epitaxy Conference, Cancun, Mexico, Oct. 4-7, 2015.
  • 289.  X.-M. Shen, Z.-Y. He, S. Liu, Y.-H. Zhang, D. J. Smith, and M. R. McCartney, Determination of Heterointerface Band Alignments in nBn Photodetectors Using Off-Axis Electron Holography, the 31th North American Molecular Beam Epitaxy Conference, Cancun, Mexico, Oct. 4-7, 2015.
  • 288.  P. T. Webster, A. J. Shalindar, Y.-H. Zhang, S. R. Johnson, Optical properties of InAsBi/InAs quantum wells, the 31th North American Molecular Beam Epitaxy Conference, Cancun, Mexico, Oct. 4-7, 2015.
  • 287.  Y.-S. Kuo, Z-Y. He, J. Becker, X-H. Zhao, M. B. Lassise, C. M. Campbell, S. Liu, and Y-H. Zhang, Interface and Vertical Transport Study of CdTe/InSb Grown by MBE, the 31th North American Molecular Beam Epitaxy Conference, Cancun, Mexico, Oct. 4-7, 2015.
  • 286.  Z.-Y. Lin and Y.-H. Zhang, A real-time baseline correction method for infrared time-resolved photoluminescence, 2015 SPIE Optics and Photonics, San Diego, USA, August 8-13, 2015.
  • 285.  P. T. Webster, A. J. Shalindar, Y.-H. Zhang, S. R. Johnson, Optical properties of InAsBi quantum wells and bulk layers, the 2015 Workshop on Bismuth-containing Semiconductors, Madison, USA, Jul. 19-22, 2015.
  • 284.  Y. Zhao, S. Liu, and Y.-H. Zhang, Does below-bandgap absorption improve solar cell efficiency? the 42th IEEE Photovoltaic Specialist Conference, New Orleans, USA, Jun. 14-19, 2015.
  • 283.  Y. Zhao and Y.-H. Zhang, Simulated performance of monocrystalline CdTe/MgCdTe double heterostructure solar cells, the 42th IEEE Photovoltaic Specialist Conference, New Orleans, USA, Jun. 14-19, 2015.
  • 282.  S. Liu, X.-H. Zhao, Y. Zhao, C. Campbell, M. Lassise, E. Suarez, and Y.-H. Zhang, Structural and optical properties of MgxCd1-xTe alloys grown on InSb (100) substrates using molecular beam epitaxy, the 42th IEEE Photovoltaic Specialist Conference, New Orleans, USA, Jun. 14-19, 2015.
  • 281.  S. Liu, X.-H. Zhao, C. Campbell, M. Lassise, Y. Zhao, and Y.-H. Zhang, Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures, the 42th IEEE Photovoltaic Specialist Conference, New Orleans, USA, Jun. 14-19, 2015.
  • 280.  X.-H. Zhao, S. Liu, Y. Zhao, C. M. Campbell, M. B. Lassise, Y.-S. Kuo, and Y.-H. Zhang, Optical properties of indium-doped CdTe/MgCdTe double heterostructures, the 42th IEEE Photovoltaic Specialist Conference, New Orleans, USA, Jun. 14-19, 2015.
  • 279.  X.-H. Zhao, S. Liu, C. M. Campbell, and Y.-H. Zhang, Study of carrier lifetime degradation in (Zn)CdTe/MgCdTe double heterostructures, the 42th IEEE Photovoltaic Specialist Conference, New Orleans, USA, Jun. 14-19, 2015.
  • 278.  Y.-S. Kuo, J. Becker, S. Liu, Y. Zhao, X.-H. Zhao, P.-Y. Su, I. Bhat, Y.-H. Zhang, Monocrystalline ZnTe/CdTe/MgCdTe Double Heterostructure Solar Cells Grown on InSb Substrates, the 42th IEEE Photovoltaic Specialist Conference, New Orleans, USA, Jun. 14-19, 2015.
  • 277.  D. Zuo, R. Liu, D. Wasserman, J. Mabon, Z. He, S. Liu, Y.-H. Zhang, E. A. Kadlec, B. V. Olson, and E. A. Shaner, Diffusion Characterization Using Electron Beam Induced Current and Time-Resolved Photoluminescence of InAs/InAsSb Type-II Superlattices, CELO, San Jose, May 10-15, 2015.
  • 276.  E. H. Steenbergen, Z.-Y. Lin, S. Elhamri, Y.-H. Zhang, R. Kaspi, Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties, SPIE Defense + Security, Baltimore, USA, Apr. 20-24, 2015.
  • 275.  Z.-Y. Lin, S. Liu, and Y.-H. Zhang, Minority carrier lifetimes in InAs/InAsSb type-II superlattices measured using double-modulation time-resolved photoluminescence, SPIE Defense + Security, Baltimore, USA, Apr. 20-24, 2015.
2014
  • 274.  X.-H. Zhao, M. J. DiNezza, S. Liu, Y.-S. Kuo, C. Campbell, Y. Zhao, and Y.-H Zhang, Low interface recombination velocity in MBE grown CdTe/MgCdTe double heterostructures, U.S. Workshop on the Physics & Chemistry of II-VI materials, Baltimore, MD, Oct. 21-23, 2014.
  • 273.  Y.-S. Kuo, J. Becker, Y. Zhao, M. J. DiNezza, X.-H. Zhao, S. Liu, C. Campbell, X. Liu, J. K. Furdyna, and Y.-H. Zhang, Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb using MBE, U.S. Workshop on the Physics & Chemistry of II-VI materials, Baltimore, MD, Oct. 21-23, 2014.
  • 272.  P. T. Webster, J. Lu, N. A. Riordan, E. H. Steenbergen, S. Liu, D. J. Smith, Y.-H. Zhang, and S. R. Johnson, Optical Properties of InAs/InAsSb Superlattices Grown With and Without Bi as a Surfactant, presented at 18th International MBE Conference, Flagstaff, AZ, September 8-12, 2014.