Y.-H. Zhang, Semiconductors Heterovalent Interfaces and Integration, 2019 MRS Spring Meeting,Phoenix, Arizona, April 22-26, 2019
2018
Y.-H. Zhang, Semiconductor Heterovalent Interfaces, Structures and Their Application in Devices, the 20th International Conference on Molecular Beam Epitaxy, Shanghai, September 2-7, 2018
Y.-H. Zhang, Crystalline CdTe/MgCdTe and Mg0.13Cd0.77Te/MgxCd1-xTe double heterostructures and solar cells, MRS Spring Meeting, Phoenix, April 2-6, 2018
2017
D. J. Smith, M. Lassise, J. Lu, B.D. Tracy, M.R. McCartney, Y.-H. Zhang, Studying II/VI Compound Semiconductors grown with Heterovalent Interfaces, the 18th International Conference on II-VI Compounds, San Juan, Puerto Rico, September 24 -29, 2017 (Due to Hurricane Maria, the conf. was cancelled but the proceedings will be published.)
Y.-H. Zhang, Heterovalent II-VI and III-V semiconductor integration: A platform for solar cell and other optoelectronic device applications, 2017 IEEE Photonics Conference (IPC) Orlando, Oct. 1-5, 2017.
Y.-H. Zhang, II-VI and III-V semiconductor integration and their applications in solar cells and other optoelectronic devices, Light Conference 2016-Winter Summit, 9-13 January 2017, Changchun, China.
2016
Y.-H. Zhang, CdTe/MgCdTe Double Heterostructures and Solar Cells with a VOC greater than 1 V and an efficiency of 18%, 2016 US Workshop on the Physics and Chemistry of II-VI Materials, Baltimore, October 18-20, 2016
Y.-H. Zhang, InAs/InAsSb type-II superlattices: material properties and device applications, the 13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-XIII), Beijing, Sept. 18-22, 2016.
Y.-H. Zhang, Ga-free InAs/InAsSb type-II superlattice and its applications to IR lasers and photodetectors, APS March Meeting, Baltimore, 2016
S. Liu, X.-H. Zhao, C. Campbell, M. B. Lassise, Y. Zhao, Y.-H. Zhang, CdTe/MgCdTe double heterostructures with ultra-long lifetime and ultra-low interface recombination velocity and their potential for luminescence refrigeration, SPIE Photonics West, San Francisco, Feb. 13-18, 2016
E. H. Steenbergen, J. A. Massengale, Y.-H. Zhang, Photoluminescence studies of InAs/InAsSb type-II infrared superlattices, SPIE Photonics West, San Francisco, Feb. 13-18, 2016
Z.-Y. He, S. Liu, C. Campbell, M. B. Lassise, Y.-S. Kuo, Z.-Y. Lin, Y.-H. Zhang, Optically-addressed visible/MWIR two-color photodetectors based on monolithically-integrated CdTe nBn and InSb PIN sub-photodetectors, SPIE Photonics West, San Francisco, Feb. 13-18, 2016
2015
S. Liu, X.-H. Zhao, Y. Zhao, J. Becker, C. Campbell, M. Lassise, Y.-S. Kuo, M. DiNezza, E. Suarez, and Y.-H. Zhang, Improving CdTe solar cell efficiency through novel heterostructures, Material Science Technology Conference, Columbus, USA, Oct 4-8, 2015
Y.-H. Zhang, InAs/InAsSb superlattices and optoelectronic devices, 2015 IEEE Summer Topicals Meeting Series, Nassau, Bahama, 13 – 15 July 2015
P. T. Webster, A. J. Shalindar, J. Lu, N. A. Riordan, S. Liu, E. H. Steenbergen, R. A. Synowicki, D. J. Smith, Y.-H. Zhang, S. R. Johnson, Molecular beam epitaxy growth of III-V materials at the GaSb lattice constant using bismuth both as an alloy constituent and as a surfactant, the 2015 Lawrence Workshop on Epitaxy, Tempe, USA, Feb. 26-27, 2015
2014
Y.-H. Zhang, S. L. Chuang, D. Wasserman, J. M. Zuo, R. D. Dupuis, S. R. Johnson, D. J. Smith, and Y. Zhang. Fundamental Study of Defects and Their Reduction in Type-II Superlattice Materials, DOD VISTA program review, Teledyne Scientific & Imaging, Thousand Oaks, CA, Dec. 10-11, 2014.
