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ASU MBE Optoelectronics Group

Temperature and power-dependent photoluminescence

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Temperature and power-dependent photoluminescence

The photoluminescence setup was recently equiped with a new CCD array detector for measurements in the 200 nm to 1100 nm wavelength range, as well as an InGaAs array for measurements in the 800 nm to 1700 nm wavelength range.  Four different lasers are currently used in this system: A 6 W 532 nm diode pumped solid state laser, a 40 mW 532 diode pumped solid state laser, a 120 mW 405 nm laser and a tunable Ti:Sapphire laser. A cryostat enables temperature photoluminescence measurements ranging from 8 K to 320 K.

Photoluminescence setup diagram and instructions

Skills

Posted on

January 31, 2018