by Fulton Schools | Aug 8, 2018
Type-II Superlattice Semiconductors for Infrared Photodetectors E. H. Steenbergen, et al., Appl. Phys. Lett. 99, 251110 (2011). Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a...
by Fulton Schools | Aug 1, 2018
MBE growth of various kinds of III-V and II-VI compound semiconductors. A unique twin-chamber MBE system allows growth of any composition of III-V and II-VI alloys. Monolithic intergration material platform for various optoelectronic and electronic device...
by Fulton Schools | Jan 31, 2018
Photon extraction factor vs spontaneous emission efficiency for the maximum photon recycling case in a and for the minimum photon recycling case in b. The cooling efficiency is positive in the shaded area and zero along the solid line. The ideal cooling coefficient...
by Fulton Schools | Jan 31, 2018
E. H. Steenbergen, et al. Appl. Phys. Lett. 97 161111-161114 (2010). A two-terminal multicolor photodetector that is most advantageous for greater than two bands is proposed. Individual color detection is realized with appropriate optical biasing. This concept is...
